Samsung MDRR644QDBC2-3L000 Specifications
| Parameter | Specification |
|---|---|
| Model Number | MDRR644QDBC2-3L000 |
| Brand | Samsung |
| Memory Type | DDR5 ECC RDIMM (Registered DIMM) |
| Capacity | 64GB |
| Data Rate | 6400 MT/s |
| Speed Grade | PC5-51200R |
| Rank Configuration | 2Rx4 |
| Error Correction | ECC Supported |
| CAS Latency | CL52 |
| Operating Voltage | 1.1V |
| Pin Count | 288-pin |
| Form Factor | RDIMM (Registered DIMM) |
| DRAM Organization | x4-based DRAM |
| Memory Bandwidth | 51.2 GB/s |
| Operating Temperature | 0°C to 95°C |
| Compliance | JEDEC DDR5 Standard |
| Applications | Enterprise Servers, Data Centers, Cloud Computing, Virtualization, and High-Performance Computing (HPC) |
Product Advantages
- Ultra-Fast DDR5-6400 Performance – Delivers up to 51.2 GB/s bandwidth for demanding server and data center workloads.
- Large 64GB Capacity – Ideal for virtualization, databases, AI computing, and memory-intensive applications.
- ECC Data Protection – Detects and corrects memory errors to improve system reliability and data integrity.
- Enterprise-Class RDIMM Design – Enhances signal integrity and supports large-scale memory configurations.
- Energy Efficient – Operates at only 1.1V, reducing power consumption while maintaining high performance.
- Data Center Optimized – Designed for mission-critical servers, cloud infrastructure, and high-performance computing environments.
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